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September 2007
N-Channel 2.5V Specified PowerTrench MOSFET
F DC637BNZ
20V, 6.2A, 24m ?
?
tm
Features
Max r DS(on) = 24m ? at V GS = 4.5V, I D = 6.2A
Max r DS(on) = 32m ? at V GS = 2.5V, I D = 5.2A
Fast switching speed
Low gate charge (8nC typical)
High performance trench technology for extremely low r DS(on)
SuperSOT?–6 package: small footprint (72% smaller than
standard SO-8; low profile (1mm thick)
HBM ESD protection level > 2kV typical (Note 3)
Manufactured using green packaging material
Halide-Free
RoHS Compliant
S
General Description
This N-Channel 2.5V specified MOSFET is produced using
Fairchild Semiconductor ’s advanced PowerTrench ? process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices have been designed to offer exceptional power
dissipation in a very small footprint compared with bigger SO-8
and TSSOP-8 packages.
Applications
DC - DC Conversion
Load switch
Battery Protection
D
D
G
D
D
1
2
6
5
D
D
Pin 1
D
D
G
3
4
S
SuperSOT TM -6
MOSFET Maximum Ratings T A = 25°C unless otherwise noted
Symbol
V DS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
20
±12
Units
V
V
I D
Drain Current
-Continuous
-Pulsed
T A = 25°C
(Note 1a)
6.2
20
A
P D
Power Dissipation
Power Dissipation
T A = 25°C
T A = 25°C
(Note 1a)
(Note 1b)
1.6
0.8
W
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1b)
78
156
°C/W
Package Marking and Ordering Information
Device Marking
.637Z
Device
FDC637BNZ
Package
SSOT6
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
?2007 Fairchild Semiconductor Corporation
FDC637BNZ Rev.C
1
www.fairchildsemi.com
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